IXFK24N100Q3 Datasheet - IXYS

IXFK24N100Q3 Power MOSFET

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK24N100Q3 IXFX24N100Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 V 1000 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 24 60 24 2 50 1000 -55 +150.

IXFK24N100Q3 Features

* Low Intrinsic Gate Resistance

* Low Package Inductance

* Fast Intrinsic Rectifier

* Low RDS(on) and QG Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* Battery Chargers

* Switch-Mode and Resonant-Mode Power Su

IXFK24N100Q3 Datasheet (1.88 MB)

IXFK24N100Q3 Datasheet Preview — Preview of IXFK24N100Q3 PDF

Datasheet Details

Part number:

IXFK24N100Q3

Manufacturer:

IXYS

File Size:

1.88 MB

Description:

Power mosfet.

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IXFK24N100Q3 Power MOSFET IXYS

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