* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(
IXFR24N100 Datasheet (65.76 KB)
IXFR24N100
IXYS Corporation
65.76 KB
Hiperfettm power mosfets.
Advanced Technical Information
HiPerFETTM Power MOSFETs IXFR 24N100 VDSS = 1000 V ISOPLUS247TM 22 A ID25 =
(Electrically Isolated Back Surface) Singl.
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