IXFR24N100 HiPerFETTM Power MOSFETs

IXYS Corporation

Description

Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 24N100 VDSS = 1000 V ISOPLUS247TM 22 A ID25 = (Electrically Isolated Back Surface) Singl.

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Datasheet Specifications

Part number: IXFR24N100
Manufacturer: IXYS Corporation
File Size: 65.76 KB
Datasheet: IXFR24N100_IXYSCorporation.pdf
Description: HiPerFETTM Power MOSFETs

Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(

Applications

* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* AC motor control Advantages
* Easy assembly
* Space savings
* High power density 1.6 mm (0.063 in. ) from case for 10 s 50/60 Hz, RMS

IXFR24N100 Distributors

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IXFR24N100 HiPerFETTM Power MOSFETs IXYS Corporation

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