* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(
IXFR24N50Q Datasheet (111.40 KB)
IXFR24N50Q
IXYS Corporation
111.40 KB
Hiperfet power mosfets.
HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM
IXFR 24N50Q (Electrically Isolated Back Surface)
N-Channel Enhancement Mode High dV/dt, Low trr, HDM.
📁 Related Datasheet
IXFR24N50 HiPerFET Power MOSFETs (IXYS Corporation)
IXFR24N100 HiPerFETTM Power MOSFETs (IXYS Corporation)
IXFR200N10P PolarTM HiPerFET Power MOSFET (IXYS Corporation)
IXFR20N100P Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFR20N120P Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFR20N80P PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFR21N100Q HiPerFETTM Power MOSFETs (IXYS Corporation)
IXFR26N50 HiPerFET Power MOSFETs (IXYS Corporation)
IXFR26N50Q HiPerFET Power MOSFETs (IXYS Corporation)
IXFR26N60Q HiPerFETTM Power MOSFETs (IXYS Corporation)
