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IXFR24N50Q HiPerFET Power MOSFETs

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Description

HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM IXFR 24N50Q (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDM.

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Datasheet Specifications

Part number
IXFR24N50Q
Manufacturer
IXYS Corporation
File Size
111.40 KB
Datasheet
IXFR24N50Q_IXYSCorporation.pdf
Description
HiPerFET Power MOSFETs

Features

* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(

Applications

* l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control Advantages l Easy assembly: no screws, or isolation foils required l Space savings l High power density l Low collector capacitance to ground (low EMI) Symbol Test Conditions Ch

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