IXFR24N50Q Datasheet - IXYS Corporation

IXFR24N50Q HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM IXFR 24N50Q (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) 0.20 Ω 0.23 Ω 500 V 24 A 500 V 22 A trr ≤ 250 ns www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = .

IXFR24N50Q Features

* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(

IXFR24N50Q_IXYSCorporation.pdf