IXFR102N30P Datasheet - IXYS

IXFR102N30P - Polar HiPerFET Power MOSFET

Advanced Technical Information www.DataSheet4U.com PolarHTTM HiPerFET IXFR 102N30P Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode VDSS ID25 RDS(on) trr = = = ≤ 300 V 60 A 36 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤.

IXFR102N30P Features

* z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting force 300 2500 22..130/5..29 5 Advantages z z z Easy to mount Space savings High power densi

IXFR102N30P_IXYS.pdf

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Datasheet Details

Part number:

IXFR102N30P

Manufacturer:

IXYS

File Size:

110.63 KB

Description:

Polar hiperfet power mosfet.

IXFR102N30P Distributor

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IXFR102N30P Polar HiPerFET Power MOSFET IXYS