IXFR102N30P Datasheet - IXYS

IXFR102N30P, Polar HiPerFET Power MOSFET

Advanced Technical Information www.DataSheet4U.com PolarHTTM HiPerFET IXFR 102N30P Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode VDSS.

IXFR102N30P_IXYS.pdf

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Datasheet Details

Part number:

IXFR102N30P

Manufacturer:

IXYS

File Size:

110.63 KB

Description:

Polar HiPerFET Power MOSFET

Features

* z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in. ) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting force 300 2500 22..130/5..29 5 Advantages z z z Easy to mount Space savings High power densi

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IXFR102N30P Polar HiPerFET Power MOSFET IXYS

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