Datasheet4U Logo Datasheet4U.com

IXFR102N30P Datasheet - IXYS

IXFR102N30P Polar HiPerFET Power MOSFET

Advanced Technical Information www.DataSheet4U.com PolarHTTM HiPerFET IXFR 102N30P Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode VDSS ID25 RDS(on) trr = = = ≤ 300 V 60 A 36 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤.

IXFR102N30P Features

* z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting force 300 2500 22..130/5..29 5 Advantages z z z Easy to mount Space savings High power densi

IXFR102N30P_IXYS.pdf

Preview of IXFR102N30P PDF
IXFR102N30P Datasheet Preview Page 2 IXFR102N30P Datasheet Preview Page 3

Datasheet Details

Part number:

IXFR102N30P

Manufacturer:

IXYS

File Size:

110.63 KB

Description:

Polar hiperfet power mosfet.

📁 Related Datasheet

IXFR100N25 HiPerFET Power MOSFETs (IXYS Corporation)

IXFR10N100F HiPerFET Power MOSFETs (IXYS Corporation)

IXFR10N100Q N-Channel Power MOSFET (IXYS Corporation)

IXFR120N20 Power MOSFET (IXYS Corporation)

IXFR120N25P PolarHT HiPerFET Power MOSFET (IXYS)

IXFR12N100F HiPerFET Power MOSFETs (IXYS Corporation)

IXFR12N100Q N-Channel Power MOSFET (IXYS Corporation)

IXFR140N20P PolarHT HiPerFET Power MOSFET (IXYS)

TAGS

IXFR102N30P IXFR102N30P Polar HiPerFET Power MOSFET IXYS

IXFR102N30P Distributor