* W °C °C °C °C V~ g
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(
IXFR120N20 Datasheet (34.52 KB)
IXFR120N20
IXYS Corporation
34.52 KB
Power mosfet.
Advanced Technical Information
HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ISOPLUS247TM ID25 = 105
(Electrically Isolated Back Surface) Single MO.
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