IXFR120N20 Power MOSFET

IXYS Corporation

Description

Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ISOPLUS247TM ID25 = 105 (Electrically Isolated Back Surface) Single MO.

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Datasheet Specifications

Part number: IXFR120N20
Manufacturer: IXYS Corporation
File Size: 34.52 KB
Datasheet: IXFR120N20_IXYSCorporation.pdf
Description: Power MOSFET

Features

* W °C °C °C °C V~ g
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(

Applications

* 1.6 mm (0.063 in. ) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 100 mA 2 mA 17 mW VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS =

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IXFR120N20 Power MOSFET IXYS Corporation

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