IXFR15N100Q3 Datasheet (IXYS)

IXFR15N100Q3 - Power MOSFET

Q3-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFR15N100Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 V 1000 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 10 45 7.5 1.0 50 400 -55

IXFR15N100Q3 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* Low Intrinsic Gate Resistance

* 2500V~ Electrical Isolation

* Fast Intrinsic Rectifier

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount