IXFR140N20P Datasheet - IXYS

IXFR140N20P PolarHT HiPerFET Power MOSFET

Advance Technical Information PolarHTTM HiPerFET IXFR 140N20P Power MOSFET ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated; Fast Intrinsic Diode Symbol VDSS VDGR VGS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ± 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C 17 1.6 mm (0.062 in.) .

IXFR140N20P Features

* z z z z z International standard isolated package UL recognized package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z Characteristic Values Min. Typ. Max. 200 2.5 5.0 ± 200 25 250 22 V V nA μA μA mΩ mΩ z Ea

IXFR140N20P_IXYS.pdf