IXFR14N100Q2 Datasheet - IXYS

IXFR14N100Q2 HiPerFET Power MOSFET

Advanced Technical Data HiPerFET Power MOSFETs TM IXFR14N100Q2 Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS, t = 1 min ISOL = 1mA, t = 1 s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C .

IXFR14N100Q2 Features

* z z Double metal process for low gate resistance Epoxy meet UL 94 V-0, flammability classification Low RDS (on), low Qg Avalanche energy and current rated Fast intrinsic rectifier Applications z z 20..120 / 4.6..27 N/lb 5 g z z z DC-DC converters Switched-mode and resonant-mode power supplies,

IXFR14N100Q2_IXYS.pdf