* D = Drain
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(
IXFR15N80Q Datasheet (61.91 KB)
IXFR15N80Q
IXYS Corporation
61.91 KB
Hiperfet power mosfet.
www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFR 15N80Q VDSS ISOPLUS247TM Q Class ID25 (Electrically Isolated Back Surface) N-Channel Enhancement Mo.
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