IXFR32N100Q3 Datasheet - IXYS

IXFR32N100Q3 Power MOSFET

Q3-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFR32N100Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 V 1000 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 23 96 32 2 50 570 -55 +15.

IXFR32N100Q3 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* Low Intrinsic Gate Resistance

* 2500V~ Electrical Isolation

* Fast Intrinsic Rectifier

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

IXFR32N100Q3 Datasheet (623.00 KB)

IXFR32N100Q3 Datasheet Preview — Preview of IXFR32N100Q3 PDF

Datasheet Details

Part number:

IXFR32N100Q3

Manufacturer:

IXYS

File Size:

623.00 KB

Description:

Power mosfet.

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IXFR32N100Q3 Power MOSFET IXYS

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