* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* Low Intrinsic Gate Resistance
* 2500V~ Electrical Isolation
* Fast Intrinsic Rectifier
* Avalanche Rated
* Low Package Inductance Advantages
* High Power Density
* Easy to Mount
IXFR32N100Q3 Datasheet (623.00 KB)
IXFR32N100Q3
IXYS
623.00 KB
Power mosfet.
Q3-Class HiperFETTM Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Fast Intrinsic Rectifier
IXFR32N100Q3
D G
S
Symbol
VDSS VDGR.
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