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IXFR32N100Q3 Power MOSFET

IXFR32N100Q3 Description

Q3-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFR32N100Q3 D G S Symbol VDSS VDGR.

IXFR32N100Q3 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* Low Intrinsic Gate Resistance
* 2500V~ Electrical Isolation
* Fast Intrinsic Rectifier
* Avalanche Rated
* Low Package Inductance Advantages
* High Power Density
* Easy to Mount

IXFR32N100Q3 Applications

* DC-DC Converters
* Battery Chargers
* Switch-Mode and Resonant-Mode Power Supplies
* DC Choppers
* Temperature and Lighting Controls © 2020 IXYS CORPORATION, All Rights Reserved DS100366B(1/20) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs VDS = 20V,

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Datasheet Details

Part number
IXFR32N100Q3
Manufacturer
IXYS
File Size
623.00 KB
Datasheet
IXFR32N100Q3-IXYS.pdf
Description
Power MOSFET

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Power MOSFET IXYS
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