* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* Low Intrinsic Gate Resistance
* 2500V~ Electrical Isolation
* Fast Intrinsic Rectifier
* Avalanche Rated
* Low Package Inductance Advantages
* High Power Density
* Easy to Mount
IXFR32N80Q3 Datasheet (622.35 KB)
IXFR32N80Q3
IXYS
622.35 KB
Power mosfet.
Q3-Class HiperFETTM Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated
IXFR32N80Q3
D G
S
S.
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