IXFR30N60P Datasheet - IXYS Corporation

IXFR30N60P, PolarHV HiPerFET Power MOSFET

PolarHVTM HiPerFET Power MOSFET IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche .

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IXFR30N60P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFR30N60P

Manufacturer:

IXYS Corporation

File Size:

154.91 KB

Description:

PolarHV HiPerFET Power MOSFET

Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

Applications

* z DC-DC converters z z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 25 500 250 V V nA μA μA m

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IXFR30N60P PolarHV HiPerFET Power MOSFET IXYS Corporation

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