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IXFR30N110P Datasheet - IXYS Corporation

IXFR30N110P - Polar Power MOSFET HiPerFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL FC www.DataSheet4U.net IXFR30N110P VDSS ID25 RDS(on) trr = = ≤ ≤ 1100V 16A 400mΩ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1100 1100 ± 30 ±

IXFR30N110P Features

* Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5

* substrate - High power dissipation - Isolated moun

IXFR30N110P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFR30N110P

Manufacturer:

IXYS Corporation

File Size:

129.52 KB

Description:

Polar power mosfet hiperfet.

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