IXFR30N110P Datasheet - IXYS Corporation

IXFR30N110P, Polar Power MOSFET HiPerFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.

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IXFR30N110P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFR30N110P

Manufacturer:

IXYS Corporation

File Size:

129.52 KB

Description:

Polar Power MOSFET HiPerFET

Features

* Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5
* substrate - High power dissipation - Isolated moun

Applications

* z z z 50 μA 2.5 mA 400 mΩ z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters © 2008 IXYS CORPORATION, A

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IXFR30N110P Polar Power MOSFET HiPerFET IXYS Corporation

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