IXFR30N50Q Datasheet - IXYS Corporation

IXFR30N50Q Power MOSFET

HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 minute leads-to-tab Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ .

IXFR30N50Q Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* Low drain to tab capacitance(

IXFR30N50Q Datasheet (92.66 KB)