Datasheet4U Logo Datasheet4U.com

IXFR14N80 Datasheet - IXYS

IXFR14N80 Power MOSFET

HiPerFETTM Power MOSFETs IXFR 14N80 IsoPlus247TM (Electrically Isolated Tab) N-Channel Enhancement Mode High dv/dt, Low t , HDMOSTM Family rr V = 800 DSS ID25 = 14 =RDS(on) 0.7 V A Ω trr ≤ 250 ns Symbol VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt PD T J TJM T stg TL VISOL Weight Symbol VDSS V GS(th) IGSS IDSS Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VD.

IXFR14N80 Features

* °C z Isolated mounting tab °C z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure °C z Unclamped Inductive Switching (UIS) V rated z Low drain to tab capacitance(

IXFR14N80 Datasheet (71.32 KB)

Preview of IXFR14N80 PDF
IXFR14N80 Datasheet Preview Page 2

Datasheet Details

Part number:

IXFR14N80

Manufacturer:

IXYS

File Size:

71.32 KB

Description:

Power mosfet.

📁 Related Datasheet

IXFR14N100Q2 HiPerFET Power MOSFET (IXYS)

IXFR140N20P PolarHT HiPerFET Power MOSFET (IXYS)

IXFR100N25 HiPerFET Power MOSFETs (IXYS Corporation)

IXFR102N30P Polar HiPerFET Power MOSFET (IXYS)

IXFR10N100F HiPerFET Power MOSFETs (IXYS Corporation)

IXFR10N100Q N-Channel Power MOSFET (IXYS Corporation)

IXFR120N20 Power MOSFET (IXYS Corporation)

IXFR120N25P PolarHT HiPerFET Power MOSFET (IXYS)

TAGS

IXFR14N80 Power MOSFET IXYS

IXFR14N80 Distributor