* °C z Isolated mounting tab °C z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure °C z Unclamped Inductive Switching (UIS) V rated z Low drain to tab capacitance(
IXFR14N80 Datasheet (71.32 KB)
IXFR14N80
IXYS
71.32 KB
Power mosfet.
HiPerFETTM Power MOSFETs IXFR 14N80 IsoPlus247TM (Electrically Isolated Tab)
N-Channel Enhancement Mode High dv/dt, Low t , HDMOSTM Family
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V = 800.
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