IXFR150N15 Datasheet - IXYS

IXFR150N15 Power MOSFET

Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) Single MOSFET Die IXFR 150N15 V = 150 V DSS ID25 = 105 A RDS(on) = 12.5 mW trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) I DM IAR E AR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Symbol VDSS VGS(th) IGSS I DSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) T C = 25°C, Note.

IXFR150N15-IXYS.pdf