* W °C °C °C °C V~ V~ z z ISOPLUS247 (IXFR) G D Isolated Back Surface D = Drain G = Gate S = Source z z z Double metal process for low gate resistance Silicon chip on DCB substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Epoxy meet UL 94 V-0, flammabil
IXFR38N80Q2 Datasheet (568.31 KB)
IXFR38N80Q2
IXYS Corporation
568.31 KB
Power mosfet.
HiPerFETTM MOSFET Q2-Class (Electrically Isolated Back Surface) IXFR 38N80Q2 VDSS ID25 RDS(on) = = = 800 V 28 A 240 mΩ trr ≤ 250 ns Preliminary .
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