Datasheet Specifications
- Part number
- IXFR34N80
- Manufacturer
- IXYS Corporation
- File Size
- 89.42 KB
- Datasheet
- IXFR34N80_IXYSCorporation.pdf
- Description
- Power MOSFET
Description
www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) Single MOSFET Die Avalanche Rated Preliminary Data Sheet S.
Features
* W °C °C °C °C V~ g l l l l l l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(Applications
* l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 150 2.0 V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 0.24 Ω l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V,IXFR34N80 Distributors
📁 Related Datasheet
📌 All Tags