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IXFR34N80 Datasheet - IXYS Corporation

IXFR34N80, Power MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) Single MOSFET Die Avalanche Rated Preliminary Data Sheet S.
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IXFR34N80_IXYSCorporation.pdf

Preview of IXFR34N80 PDF

Datasheet Details

Part number:

IXFR34N80

Manufacturer:

IXYS Corporation

File Size:

89.42 KB

Description:

Power MOSFET

Features

* W °C °C °C °C V~ g l l l l l l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(

Applications

* l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 150 2.0 V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 0.24 Ω l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V,

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