* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(
IXFR32N50Q Datasheet (92.66 KB)
IXFR32N50Q
IXYS Corporation
92.66 KB
Power mosfet.
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
Preliminary .
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