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IXFR32N50Q, IXFR30N50Q Datasheet - IXYS Corporation

IXFR32N50Q Power MOSFET

HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 minute leads-to-tab Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ .

IXFR32N50Q Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* Low drain to tab capacitance(

IXFR30N50Q_IXYSCorporation.pdf

This datasheet PDF includes multiple part numbers: IXFR32N50Q, IXFR30N50Q. Please refer to the document for exact specifications by model.
IXFR32N50Q Datasheet Preview Page 2 IXFR32N50Q Datasheet Preview Page 3

Datasheet Details

Part number:

IXFR32N50Q, IXFR30N50Q

Manufacturer:

IXYS Corporation

File Size:

92.66 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXFR32N50Q, IXFR30N50Q.
Please refer to the document for exact specifications by model.

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TAGS

IXFR32N50Q IXFR30N50Q Power MOSFET IXYS Corporation

IXFR32N50Q Distributor