IXFR32N50Q Datasheet, MOSFET, IXYS Corporation

IXFR32N50Q Features

• Mosfet
• Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
• Low drain to tab capacitance(<50pF)

PDF File Details

Part number:

IXFR32N50Q

Manufacturer:

IXYS Corporation

File Size:

92.66kb

Download:

📄 Datasheet

Description:

Power mosfet.

IXFR32N50Q Application

• Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 3

TAGS

IXFR32N50Q

IXYS Corporation

📁 Related Datasheet

IXFR32N100Q3 - Power MOSFET (IXYS)
Q3-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFR32N100Q3 D G S Symbol VDSS VDGR.

IXFR32N80Q3 - Power MOSFET (IXYS)
Q3-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated IXFR32N80Q3 D G S S.

IXFR30N110P - Polar Power MOSFET HiPerFET (IXYS Corporation)
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.

IXFR30N50Q - Power MOSFET (IXYS Corporation)
HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary .

IXFR30N60P - PolarHV HiPerFET Power MOSFET (IXYS Corporation)
PolarHVTM HiPerFET Power MOSFET IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche .

IXFR34N80 - Power MOSFET (IXYS Corporation)
.. HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) Single MOSFET Die Avalanche Rated Preliminary Data Sheet S.

IXFR36N50P - Polar MOSFETs (IXYS Corporation)
Advance Technical Information PolarHVTM HiPerFET Power MOSFET .. IXFC 36N50P IXFR 36N50P VDSS ID25 (Electrically Isolated Back Su.

IXFR36N60P - Power MOSFET (IXYS)
Advance Technical Information .. PolarHV HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avala.

IXFR38N80Q2 - Power MOSFET (IXYS Corporation)
HiPerFETTM MOSFET Q2-Class (Electrically Isolated Back Surface) IXFR 38N80Q2 VDSS ID25 RDS(on) = = = 800 V 28 A 240 mΩ trr ≤ 250 ns Preliminary .

IXFR100N25 - HiPerFET Power MOSFETs (IXYS Corporation)
Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High.