Datasheet Specifications
- Part number
- IXFR20N80P
- Manufacturer
- IXYS Corporation
- File Size
- 152.89 KB
- Datasheet
- IXFR20N80P_IXYSCorporation.pdf
- Description
- PolarHV HiPerFET Power MOSFET
Description
PolarHVTM HiPerFET Power MOSFET IXFC 20N80P IXFR 20N80P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche .
Features
* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(Applications
* z DC-DC converters z z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ±100 25 1 500 V V nA μA mA mIXFR20N80P Distributors
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