IXFR20N80P Datasheet - IXYS Corporation

IXFR20N80P, PolarHV HiPerFET Power MOSFET

PolarHVTM HiPerFET Power MOSFET IXFC 20N80P IXFR 20N80P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche .

datasheet Preview Page 1 from Datasheet4u.com

IXFR20N80P_IXYSCorporation.pdf

IXFR20N80P Datasheet Preview — Preview of IXFR20N80P PDF

Datasheet Details

Part number:

IXFR20N80P

Manufacturer:

IXYS Corporation

File Size:

152.89 KB

Description:

PolarHV HiPerFET Power MOSFET

Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

Applications

* z DC-DC converters z z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ±100 25 1 500 V V nA μA mA m

IXFR20N80P Distributors

📁 Related Datasheet

IXFR102N30P IXFR120N25P IXFR140N20P IXFR14N100Q2 IXFR14N80 IXFR150N15

📌 All Tags

IXFR20N80P PolarHV HiPerFET Power MOSFET IXYS Corporation

IXYS Corporation IXFR20N80P-like datasheet