IXFR20N100P Datasheet - IXYS Corporation

IXFR20N100P, Polar Power MOSFET HiPerFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.

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IXFR20N100P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFR20N100P

Manufacturer:

IXYS Corporation

File Size:

125.49 KB

Description:

Polar Power MOSFET HiPerFET

Features

* Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5
* Weight substrate - High power dissipation - Isolated mounting surface - 2500V e

Applications

* Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 10A, Note 1 TJ = 125°C 470 Characteristic Values Min. Typ. Max. 1000 3.5 6.5 ± 200 V V nA

IXFR20N100P Distributors

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IXFR20N100P Polar Power MOSFET HiPerFET IXYS Corporation

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