IXFR20N100P Datasheet - IXYS Corporation

IXFR20N100P Polar Power MOSFET HiPerFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL FC www.DataSheet4U.net IXFR20N100P VDSS ID25 RDS(on) trr = 1000V = 11A ≤ 640mΩ ≤ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 4.

IXFR20N100P Features

* Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5

* Weight substrate - High power dissipation - Isolated mounting surface - 2500V e

IXFR20N100P_IXYSCorporation.pdf