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IXFR20N100P

Polar Power MOSFET HiPerFET

IXFR20N100P Features

* Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5

* Weight substrate - High power dissipation - Isolated mounting surface - 2500V e

IXFR20N100P Datasheet (125.49 KB)

Preview of IXFR20N100P PDF

Datasheet Details

Part number:

IXFR20N100P

Manufacturer:

IXYS Corporation

File Size:

125.49 KB

Description:

Polar power mosfet hiperfet.
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.

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IXFR20N100P Polar Power MOSFET HiPerFET IXYS Corporation

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