IXFR21N100Q Datasheet - IXYS Corporation

IXFR21N100Q HiPerFETTM Power MOSFETs

HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet www.DataSheet4U.com IXFR 21N100Q VDSS ID25 RDS(on) = 1000 V = 19 A = 0.50 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (curr.

IXFR21N100Q Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* IXYS advanced low Qg process

* Low gate charge and capacitances - easier to drive - faster switching

* Low drain to tab capacitance(

IXFR21N100Q Datasheet (67.52 KB)

IXFR21N100Q Datasheet Preview — Preview of IXFR21N100Q PDF

Datasheet Details

Part number:

IXFR21N100Q

Manufacturer:

IXYS Corporation

File Size:

67.52 KB

Description:

Hiperfettm power mosfets.

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IXFR21N100Q HiPerFETTM Power MOSFETs IXYS Corporation

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