* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* IXYS advanced low Qg process
* Low gate charge and capacitances - easier to drive - faster switching
* Low drain to tab capacitance(
IXFR21N100Q Datasheet (67.52 KB)
IXFR21N100Q
IXYS Corporation
67.52 KB
Hiperfettm power mosfets.
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family
Pre.
📁 Related Datasheet
IXFR200N10P PolarTM HiPerFET Power MOSFET (IXYS Corporation)
IXFR20N100P Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFR20N120P Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFR20N80P PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFR24N100 HiPerFETTM Power MOSFETs (IXYS Corporation)
IXFR24N50 HiPerFET Power MOSFETs (IXYS Corporation)
IXFR24N50Q HiPerFET Power MOSFETs (IXYS Corporation)
IXFR26N50 HiPerFET Power MOSFETs (IXYS Corporation)
IXFR26N50Q HiPerFET Power MOSFETs (IXYS Corporation)
IXFR26N60Q HiPerFETTM Power MOSFETs (IXYS Corporation)
