Part number:
IXFR21N100Q
Manufacturer:
IXYS Corporation
File Size:
67.52 KB
Description:
Hiperfettm power mosfets.
IXFR21N100Q_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFR21N100Q
Manufacturer:
IXYS Corporation
File Size:
67.52 KB
Description:
Hiperfettm power mosfets.
IXFR21N100Q, HiPerFETTM Power MOSFETs
HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet www.DataSheet4U.com IXFR 21N100Q VDSS ID25 RDS(on) = 1000 V = 19 A = 0.50 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (curr
IXFR21N100Q Features
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* IXYS advanced low Qg process
* Low gate charge and capacitances - easier to drive - faster switching
* Low drain to tab capacitance(
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