IXFR21N100Q HiPerFETTM Power MOSFETs

IXYS Corporation

Description

HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Pre.

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Datasheet Specifications

Part number: IXFR21N100Q
Manufacturer: IXYS Corporation
File Size: 67.52 KB
Datasheet: IXFR21N100Q_IXYSCorporation.pdf
Description: HiPerFETTM Power MOSFETs

Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* IXYS advanced low Qg process
* Low gate charge and capacitances - easier to drive - faster switching
* Low drain to tab capacitance(

Applications

* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* AC motor control Advantages
* Easy assembly
* Space savings
* High power density 98723 (05/24/00) VDSS VGS(th) IGSS IDSS RDS(on) VG

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IXFR21N100Q HiPerFETTM Power MOSFETs IXYS Corporation

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