IXFR24N50 HiPerFET Power MOSFETs

IXYS Corporation

Description

Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM IXFR 24N50 (Electrically Isolated Back Surface) N-Channel Enhancement.

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Datasheet Specifications

Part number: IXFR24N50
Manufacturer: IXYS Corporation
File Size: 66.84 KB
Datasheet: IXFR24N50_IXYSCorporation.pdf
Description: HiPerFET Power MOSFETs

Features

* W °C °C °C °C V~ g
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(

Applications

* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* AC motor control Advantages
* Easy assembly
* Space savings
* High power density 1.6 mm (0.062 in. ) from case for 10 s 50/60 Hz, RMS

IXFR24N50 Distributors

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IXFR24N50 HiPerFET Power MOSFETs IXYS Corporation

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