Datasheet4U Logo Datasheet4U.com

IXFR20N120P

Polar Power MOSFET HiPerFET

IXFR20N120P Features

* Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5

* substrate - High power dissipation - Isolated mounting surface - 2500V

IXFR20N120P Datasheet (130.49 KB)

Preview of IXFR20N120P PDF

Datasheet Details

Part number:

IXFR20N120P

Manufacturer:

IXYS Corporation

File Size:

130.49 KB

Description:

Polar power mosfet hiperfet.
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ.

📁 Related Datasheet

IXFR20N100P Polar Power MOSFET HiPerFET (IXYS Corporation)

IXFR20N80P PolarHV HiPerFET Power MOSFET (IXYS Corporation)

IXFR200N10P PolarTM HiPerFET Power MOSFET (IXYS Corporation)

IXFR21N100Q HiPerFETTM Power MOSFETs (IXYS Corporation)

IXFR24N100 HiPerFETTM Power MOSFETs (IXYS Corporation)

IXFR24N50 HiPerFET Power MOSFETs (IXYS Corporation)

IXFR24N50Q HiPerFET Power MOSFETs (IXYS Corporation)

IXFR26N50 HiPerFET Power MOSFETs (IXYS Corporation)

IXFR26N50Q HiPerFET Power MOSFETs (IXYS Corporation)

IXFR26N60Q HiPerFETTM Power MOSFETs (IXYS Corporation)

TAGS

IXFR20N120P Polar Power MOSFET HiPerFET IXYS Corporation

Image Gallery

IXFR20N120P Datasheet Preview Page 2 IXFR20N120P Datasheet Preview Page 3

IXFR20N120P Distributor