IXFR20N120P Datasheet - IXYS Corporation

IXFR20N120P, Polar Power MOSFET HiPerFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ.

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IXFR20N120P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFR20N120P

Manufacturer:

IXYS Corporation

File Size:

130.49 KB

Description:

Polar Power MOSFET HiPerFET

Features

* Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5
* substrate - High power dissipation - Isolated mounting surface - 2500V

Applications

* z z z 25 μA 5 mA 630 mΩ High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters © 2008 IXYS CORPORATION, All righ

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IXFR20N120P Polar Power MOSFET HiPerFET IXYS Corporation

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