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IXFR200N10P Datasheet - IXYS Corporation

IXFR200N10P PolarTM HiPerFET Power MOSFET

Advanced Technical Information PolarTM HiPerFET Power MOSFET Electrically Isolated Tab IXFR 200N10P VDSS ID25 RDS(on) = 100 V = 133 A = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 100 100 ± 20 ± 30 V V V V A A A A mJ J V/ns W °C °C °C V~ Nm/lb g VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL FC Weight ISOPLUS247 (IXFR) E15343.

IXFR200N10P Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

IXFR200N10P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFR200N10P

Manufacturer:

IXYS Corporation

File Size:

593.20 KB

Description:

Polartm hiperfet power mosfet.

IXFR200N10P Distributor

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IXFR200N10P IXFR200N10P PolarTM HiPerFET Power MOSFET IXYS Corporation