IXFR200N10P Datasheet - IXYS Corporation

IXFR200N10P, PolarTM HiPerFET Power MOSFET

Advanced Technical Information PolarTM HiPerFET Power MOSFET Electrically Isolated Tab IXFR 200N10P VDSS ID25 RDS(on) = 100 V = 133 A = 8 mΩ N-C.

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IXFR200N10P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFR200N10P

Manufacturer:

IXYS Corporation

File Size:

593.20 KB

Description:

PolarTM HiPerFET Power MOSFET

Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

Applications

* z DC-DC converters z z z z Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control 50/60 Hz, RMS, 1 minute Mounting Force 2500 20..120/4.6..20 5 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 µA VDS =

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IXFR200N10P PolarTM HiPerFET Power MOSFET IXYS Corporation

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