IXFR200N10P Datasheet, Mosfet, IXYS Corporation

IXFR200N10P Features

  • Mosfet z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z Fast recovery i

PDF File Details

Part number:

IXFR200N10P

Manufacturer:

IXYS Corporation

File Size:

593.20kb

Download:

📄 Datasheet

Description:

Polartm hiperfet power mosfet.

Datasheet Preview: IXFR200N10P 📥 Download PDF (593.20kb)
Page 2 of IXFR200N10P Page 3 of IXFR200N10P

IXFR200N10P Application

  • Applications z DC-DC converters z z z z Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control 50/60 Hz, RMS

TAGS

IXFR200N10P
PolarTM
HiPerFET
Power
MOSFET
IXYS Corporation

📁 Related Datasheet

IXFR20N100P - Polar Power MOSFET HiPerFET (IXYS Corporation)
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.

IXFR20N120P - Polar Power MOSFET HiPerFET (IXYS Corporation)
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ.

IXFR20N80P - PolarHV HiPerFET Power MOSFET (IXYS Corporation)
PolarHVTM HiPerFET Power MOSFET IXFC 20N80P IXFR 20N80P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche .

IXFR21N100Q - HiPerFETTM Power MOSFETs (IXYS Corporation)
HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Pre.

IXFR24N100 - HiPerFETTM Power MOSFETs (IXYS Corporation)
Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 24N100 VDSS = 1000 V ISOPLUS247TM 22 A ID25 = (Electrically Isolated Back Surface) Singl.

IXFR24N50 - HiPerFET Power MOSFETs (IXYS Corporation)
Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM IXFR 24N50 (Electrically Isolated Back Surface) N-Channel Enhancement.

IXFR24N50Q - HiPerFET Power MOSFETs (IXYS Corporation)
HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM IXFR 24N50Q (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDM.

IXFR26N50 - HiPerFET Power MOSFETs (IXYS Corporation)
Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM IXFR 24N50 (Electrically Isolated Back Surface) N-Channel Enhancement.

IXFR26N50Q - HiPerFET Power MOSFETs (IXYS Corporation)
HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM IXFR 24N50Q (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDM.

IXFR26N60Q - HiPerFETTM Power MOSFETs (IXYS Corporation)
HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalance Rated, High dV/dt L.

Stock and price

part
Littelfuse Inc
MOSFET N-CH 100V 133A ISOPLUS247
DigiKey
IXFR200N10P
308 In Stock
Qty : 30 units
Unit Price : $10.76
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts