IXFP4N100P Datasheet - IXYS Corporation

IXFP4N100P Power MOSFET

PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA4N100P IXFP4N100P VDSS ID25 RDS(on) = 1000V = 4A ≤ 3.3Ω TO-263 AA (IXFA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold FC Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Rati.

IXFP4N100P Features

* z z z z z G S D (Tab) TO-220AB (IXFP) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Mounting Force (TO-263) Mounting Torque (TO-220) TO-263 TO-220 300 260 10.65 / 2.2..14.6 1.13 / 10 2.5 3.0 International Standard Pack

IXFP4N100P_IXYSCorporation.pdf