IXFP4N100QM Datasheet - IXYS Corporation

IXFP4N100QM Power MOSFET

Advance Technical Information HiPerFETTM Power MOSFET Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting Torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C IXFP4N100QM VDSS = 1000V ID25 = 2.2A RDS(on) ≤ 3.0Ω Maximum Ratings 1000 1000 ±20 ±30 2.2 16 4 700.

IXFP4N100QM Features

* Plastic Overmolded Tab for Electrical Isolation International Standard Package Avalanche Rated Fast Intrinsic Diode Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages www.DataSheet4U.net Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(o

IXFP4N100QM_IXYSCorporation.pdf