Advance Technical Information HiPerFETTM Power MOSFET Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting Torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C IXFP4N100QM VDSS = 1000V ID25 = 2.2A RDS(on) ≤ 3.0Ω Maximum Ratings 1000 1000 ±20 ±30 2.2 16 4 700
IXFP4N100QM_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFP4N100QM
Manufacturer:
IXYS Corporation
File Size:
129.39 KB
Description:
Power mosfet.