IXFP4N100PM - Power MOSFET

IXYS Corporation

Datasheet Details

Part number	IXFP4N100PM
Manufacturer	IXYS Corporation
File Size	134.85 KB
Description	Power MOSFET
Datasheet	IXFP4N100PM_IXYSCorporation.pdf

z z z z 1.6 mm (0.062 in. ) from Case for 10 s Plastic Body for 10 s Mounting Torque 300 260 1.13/10 2.5 Plastic Overmolded Tab for Electrical Isolation Avalanche Rated Fast Intrinsic Diode Low Package Inductance Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ±20V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 2A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.0 6.0 V V High Powe.

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Published: May 13, 2011 |