IXFP4N100PM Datasheet - IXYS Corporation

IXFP4N100PM, Power MOSFET

Advance Technical Information PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP4N100PM VDSS ID25.

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IXFP4N100PM_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFP4N100PM

Manufacturer:

IXYS Corporation

File Size:

134.85 KB

Description:

Power MOSFET

Features

* z z z z 1.6 mm (0.062 in. ) from Case for 10 s Plastic Body for 10 s Mounting Torque 300 260 1.13/10 2.5 Plastic Overmolded Tab for Electrical Isolation Avalanche Rated Fast Intrinsic Diode Low Package Inductance Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS I

Applications

* z ±100 nA 10 μA 750 μA 3.3 Ω z z z z Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls © 2010 IXYS CORPORATION, All Rights Reserved DS100295(11/10) IXFP4N100PM Symbol Test Conditions (TJ = 25°C Unless Otherwise Specif

IXFP4N100PM Distributors

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IXFP4N100PM Power MOSFET IXYS Corporation

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