* z z z z 1.6 mm (0.062 in.) from Case for 10 s Plastic Body for 10 s Mounting Torque 300 260 1.13/10 2.5 Plastic Overmolded Tab for Electrical Isolation Avalanche Rated Fast Intrinsic Diode Low Package Inductance Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS I
IXFP4N100PM Datasheet (134.85 KB)
IXFP4N100PM
IXYS Corporation
134.85 KB
Power mosfet.
Advance Technical Information PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP4N100PM VDSS ID25.
📁 Related Datasheet
IXFP4N100P Power MOSFET (IXYS Corporation)
IXFP4N100Q Power MOSFET (IXYS Corporation)
IXFP4N100QM Power MOSFET (IXYS Corporation)
IXFP4N85X Power MOSFET (IXYS)
IXFP4N85XM Power MOSFET (IXYS)
IXFP05N100M High Voltage HiperFET (IXYS Corporation)
IXFP102N15T Power MOSFET (IXYS Corporation)
IXFP102N15T N-Channel MOSFET (INCHANGE)
IXFP10N60P Polar MOSFET (IXYS Corporation)
IXFP10N80P Power MOSFET (IXYS Corporation)
