IXFP4N85XM Datasheet - IXYS

IXFP4N85XM Power MOSFET

Preliminary Technical Information X-Class HiPERFET Power MOSFET (Electrically Isolated Tab) IXFP4N85XM VDSS = ID25 =  RDS(on) 850V 3.5A 2.5 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C, Limited by TJM TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperatu.

IXFP4N85XM Features

* International Standard Package

* Plastic Overmolded Tab

* Low RDS(ON) and QG

* 2500V~ Electrical Isolation

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode

IXFP4N85XM-IXYS.pdf

IXFP4N85XM Datasheet Preview — Preview of IXFP4N85XM PDF

Datasheet Details

Part number:

IXFP4N85XM

Manufacturer:

IXYS

File Size:

193.24 KB

Description:

Power mosfet.

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