IXFP4N100Q Datasheet - IXYS Corporation

IXFP4N100Q Power MOSFET

www.DataSheet4U.com TM HiPerFET Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V = 4 A ID25 RDS(on) = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°.

IXFP4N100Q Features

* g g

* IXYS advanced low Qg process

* Low gate charge and capacitances - easier to drive - faster switching

* International standard packages

* Low RDS (on)

* Rated for unclamped Inductive load Switching (UIS)

* Molding epoxies meet UL 94 V-0 flammabili

IXFP4N100Q Datasheet (110.87 KB)

IXFP4N100Q Datasheet Preview — Preview of IXFP4N100Q PDF

Datasheet Details

Part number:

IXFP4N100Q

Manufacturer:

IXYS Corporation

File Size:

110.87 KB

Description:

Power mosfet.

📁 Related Datasheet

IXFP4N100P Power MOSFET (IXYS Corporation)

IXFP4N100PM Power MOSFET (IXYS Corporation)

IXFP4N100QM Power MOSFET (IXYS Corporation)

IXFP4N85X Power MOSFET (IXYS)

IXFP4N85XM Power MOSFET (IXYS)

IXFP05N100M High Voltage HiperFET (IXYS Corporation)

IXFP102N15T Power MOSFET (IXYS Corporation)

IXFP102N15T N-Channel MOSFET (INCHANGE)

TAGS

IXFP4N100Q Power MOSFET IXYS Corporation

IXFP4N100Q Distributor