* g g
* IXYS advanced low Qg process
* Low gate charge and capacitances - easier to drive - faster switching
* International standard packages
* Low RDS (on)
* Rated for unclamped Inductive load Switching (UIS)
* Molding epoxies meet UL 94 V-0 flammabili
IXFP4N100Q Datasheet (110.87 KB)
IXFP4N100Q
IXYS Corporation
110.87 KB
Power mosfet.
www.DataSheet4U.com TM HiPerFET Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V = 4 A ID25 RDS(on) = 3.0 W trr £ 250 ns N-Channel Enhanc.
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