* z Fast recovery diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Plus 264TM package for clip or spring mounting z Space savings z High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0
IXFB44N100P Datasheet (127.08 KB)
IXFB44N100P
IXYS
127.08 KB
N-channel power mosfet.
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFB44N100P
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR .
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