IXFB44N100P Datasheet - IXYS

IXFB44N100P N-Channel Power MOSFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB44N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque Maximum Ratings 1000 V 1000 V .

IXFB44N100P Features

* z Fast recovery diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Plus 264TM package for clip or spring mounting z Space savings z High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0

IXFB44N100P-IXYS.pdf