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7N60A - N-CHANNEL MOSFET

Description

The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • S.
  • VDS = 600V.
  • ID = 7A.
  • RDS(ON) = 1.2Ω @VGS = 10 V.
  • Ultra low gate charge (typical 28 nC ).
  • Low reverse transfer Capacitance (CRSS= typical 12 pF ).
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 7N60A 7A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high efficiency switch mode power supply. „ FEATURES * VDS = 600V * ID = 7A * RDS(ON) = 1.2Ω @VGS = 10 V * Ultra low gate charge (typical 28 nC ) * Low reverse transfer Capacitance (CRSS= typical 12 pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness „ SYMBOL 2.Drain Power MOSFET 1.Gate 3.
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