USG170N03 mosfet equivalent, n-channel mosfet.
* RDS(ON) ≤ 2.64 mΩ @ VGS=10V, ID=30A RDS(ON) ≤ 4.1 mΩ @ VGS=4.5V, ID=25A * Optimized for high speed switching, Logic level * Enhanced Body diode dv/dt capability * Enhan.
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