USG170N03 Description
The UTC USG170N03 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC USG170N03 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.
USG170N03 Key Features
- RDS(ON) ≤ 2.64 mΩ @ VGS=10V, ID=30A RDS(ON) ≤ 4.1 mΩ @ VGS=4.5V, ID=25A
- Optimized for high speed switching, Logic level
- Enhanced Body diode dv/dt capability
- Enhanced Avalanche Ruggednessy
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