3N60 mosfet equivalent, n-channel power mosfet.
* VDS = 600V, ID = 3A * RDS(ON) < 3.6Ω @VGS = 10 V * Ultra low gate charge ( typical 18 nC ) * Low reverse transfer capacitance ( CRSS = typical 5.5 pF ) * Fast switching.
in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
* FEATURES
* VDS = 60.
The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usual.
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