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3N60 Datasheet N-CHANNEL POWER MOSFET

Manufacturer: Unisonic Technologies

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General Description

The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Overview

UNISONIC TECHNOLOGIES CO., LTD 3N60 3A, 600V N-CHANNEL POWER.

Key Features

  • S.
  • VDS = 600V, ID = 3A.
  • RDS(ON) < 3.6Ω @VGS = 10 V.
  • Ultra low gate charge ( typical 18 nC ).
  • Low reverse transfer capacitance ( CRSS = typical 5.5 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2014 Unisonic Technologies Co. , Ltd 1 of 9 QW-R502-110.H 3N60.

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