3N60 Datasheet | Specifications & PDF Download

SEMICONDUCTOR 13N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 13A, 600Volts DESCRIPTION The Nell 13N60 is a three-terminal si

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STB13N60M2 Datasheet N-channel 600 V, 350 mΩ typ., 11 A MDmesh M2 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) Features Order code VD

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ITA13N60A ITP13N60A N-Channel MOSFETI Pb Lead Free Package and Finish Applications: • Adaptor • TV Main Power • SMPS Power Supply • LCD Panel Power

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SGF23N60UFD SGF23N60UFD Ultra-Fast IGBT June 2001 IGBT General Description Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides

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SEMICONDUCTOR 3N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (3A, 600Volts) DESCRIPTION The Nell 3N60 is a three-terminal sili

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Feb 2009 PFP13N60 / PFF13N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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STF13N60M2(045Y) N-channel 600 V, 0.35 Ω typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP narrow leads package Datasheet − production data Features 3

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MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI www.DataSheet4U.com s s s s s V DSS 600 V 600 V R DS( on)

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isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 100mΩ@VGS=10V ·100% avalanche tested

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID=3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance

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600V N-Channel MOSFETs PDP03N60 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N60E/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount

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ADVANCE INFORMATION HiPerFETTM Power MOSFET Single MOSFET Die www.DataSheet4U.com VDSS I D25 43A 40A 43A 40A RDS(on) 0.13W 0.15W 0.13W 0.15W trr

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SEMICONDUCTOR TECHNICAL DATA KF3N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristi

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Data Sheet HGTD3N60A4S, HGTP3N60A4 August 2003 600V, SMPS Series N-Channel IGBT The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switch

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IXKP 13N60C5M CoolMOS™ 1) Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Prelimina

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www.DataSheet4U.com NDF03N60Z, NDP03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.3 W Features • • • • Low ON Resistance Low Gate Charge 100% Ava

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CYStech Electronics Corp. Spec. No. : C798FP Issued Date : 2010.03.12 Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MO

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Final data SPP03N60C3, SPB03N60C3 SPA03N60C3 VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A Cool MOS™ Power Transistor Feature • New revolutionary high vo

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HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 File Number 4414.1 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP

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