3N60 Datasheet | Specifications & PDF Download

SEMICONDUCTOR 13N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 13A, 600Volts DESCRIPTION The Nell 13N60 is a three-terminal si

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STB13N60M2 Datasheet N-channel 600 V, 350 mΩ typ., 11 A MDmesh M2 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) Features Order code VD

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STF13N60M2(045Y) N-channel 600 V, 0.35 Ω typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP narrow leads package Datasheet − production data Features 3

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SGF23N60UFD SGF23N60UFD Ultra-Fast IGBT June 2001 IGBT General Description Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides

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www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H03

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ITA13N60A ITP13N60A N-Channel MOSFETI Pb Lead Free Package and Finish Applications: • Adaptor • TV Main Power • SMPS Power Supply • LCD Panel Power

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Data Sheet HGTD3N60A4S, HGTP3N60A4 August 2003 600V, SMPS Series N-Channel IGBT The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switch

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HGT1S3N60A4DS, HGTP3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGT

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID=3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance

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MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI www.DataSheet4U.com s s s s s V DSS 600 V 600 V R DS( on)

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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www.DataSheet4U.com NDF03N60Z, NDP03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.3 W Features • • • • Low ON Resistance Low Gate Charge 100% Ava

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SEMICONDUCTOR 3N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (3A, 600Volts) DESCRIPTION The Nell 3N60 is a three-terminal sili

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STP13N60M2 Datasheet N-channel 600 V, 350 mΩ typ., 11 A MDmesh M2 Power MOSFET in a TO-220 package Features TAB TO-220 1 23 D(2, TAB) Order code

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Final data SPP03N60C3, SPB03N60C3 SPA03N60C3 VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A Cool MOS™ Power Transistor Feature • New revolutionary high vo

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HFP13N60U HFP13N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ V

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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FCP13N60N / FCPF13N60NT N-Channel MOSFET FCP13N60N / FCPF13N60NT N-Channel MOSFET 600V, 13A, 0.258Ω Features • RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V,

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ITA13N60A ITP13N60A N-Channel MOSFETI Pb Lead Free Package and Finish Applications: • Adaptor • TV Main Power • SMPS Power Supply • LCD Panel Power

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www.DataSheet.co.kr FMV13N60E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl

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