• Part: CHA2069-99F
  • Manufacturer: United Monolithic Semiconductors
  • Size: 280.84 KB
Download CHA2069-99F Datasheet PDF
CHA2069-99F datasheet preview
CHA2069-99F page 2
Page 2
CHA2069-99F page 3
Page 3

CHA2069-99F Key Features

  • Broad band performance 16-31GHz
  • 2.5dB noise figure
  • 22dB gain,  1dB gain flatness
  • Low DC power consumption, 55mA
  • 20dBm 3rd order intercept point
  • Chip size : 2,170 x 1,270x 0.1mm
  • 27 Oct 20
  • Parc Mosaic
  • 10, Avenue du Québec
  • 91140 VILLEBON-SUR-YVETTE

Related United Monolithic Semiconductors Datasheets

Part Number Description
CHA2069-FAA 16-32GHz Low Noise Amplifier
CHA2069-FAB Low Noise Amplifier
CHA2069-QDG 18-30GHz Low Noise Amplifier
CHA2069 18-31GHz Low Noise Amplifier
CHA2069RAF 18-31GHz Low Noise Amplifier

CHA2069-99F Description

The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.