• Part: CHA2069-FAA
  • Manufacturer: United Monolithic Semiconductors
  • Size: 327.30 KB
Download CHA2069-FAA Datasheet PDF
CHA2069-FAA datasheet preview
CHA2069-FAA page 2
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CHA2069-FAA Key Features

  • Broadband performance 16-32GHz
  • 2.5dB typical Noise Figure
  • 20dBm 3rd order intercept point
  • 22dB gain
  • Low DC power consumption
  • 6x6mm² metal ceramic hermetic package
  • 21 Dec 12
  • Parc SILIC
  • 10, Avenue du Québec
  • 91140 VILLEBON-SUR-YVETTE

Related United Monolithic Semiconductors Datasheets

Part Number Description
CHA2069-FAB Low Noise Amplifier
CHA2069-99F 18-31GHz Low Noise Amplifier
CHA2069-QDG 18-30GHz Low Noise Amplifier
CHA2069 18-31GHz Low Noise Amplifier
CHA2069RAF 18-31GHz Low Noise Amplifier

CHA2069-FAA Description

The CHA2069-FAA is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.