CHA2069-QDG
RoHS COMPLIANT
18-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA2069-QDG is a three-stage self-biased
wide band monolithic low noise amplifier.
Typical
applications
range
from
telecommunication (point to point, point to multi-
point, VSAT) to ISM and military markets.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via holes
through the substrate, air bridges and electron
beam gate lithography.
It is supplied in lead-free SMD package.
Main Features
■ Broadband performance 18-30GHz
■ 3dB noise figure
■ 20dB gain
■ 65mA low DC power consumption
■ 20dBm 3rd order intercept point (high current
configuration)
■ 24L-QFN4x4 SMD package
■ MSL Level: 1
UMS
A2069
YYWW
Gain and NF @ high current configuration
(BCF grounded)
26
24
22
20
18 S21
16
14
12
10
8
6 NF
4
2
0
10 12 14 16 18 20 22 24 26 28 30 32
Frequency (GHz)
Main Characteristics
Tamb = +25°C, Vd = +4,5V Pads: B, C, F = GND (High current configuration)
Symbol
Parameter
Min Typ Max
NF Noise figure
3 4.5
G Gain
17 20
3rd order intercept point (Pout/tone=-5dBm)
IP3 18
18-26GHz
20
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Unit
dB
dB
dBm
Ref. : DSCHA2069QDG9322- 18 Nov 09
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
