• Part: CHA2069-QDG
  • Description: 18-30GHz Low Noise Amplifier
  • Manufacturer: United Monolithic Semiconductors
  • Size: 437.74 KB
Download CHA2069-QDG Datasheet PDF
United Monolithic Semiconductors
CHA2069-QDG
Description The CHA2069-QDG is a three-stage selfbiased wide band monolithic low noise amplifier. Typical applications range from telemunication (point to point, point to multi-point, VSAT) to ISM and military markets. The circuit is manufactured with a standard p HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in lead-free SMD package. Main Features - Broadband performance 18-31GHz - 3d B noise figure - 20d B gain - 65m A low DC power consumption - 20d Bm 3rd order intercept point (high current configuration) - 24L-QFN4x4 SMD package - MSL Level: 1 Gain & NF (d B) UMS A2069 YYWW Gain and NF @ high current configuration Gain and NF(B@Clo Fw cgurroreunnt cdoenfdig). (BDE grounded) S21 10 12 14 16 18 20 22 24 26 28 30 32 Frequency (GHz) Main Characteristics Tamb = +25°C, Vd = +4,5V Pads: B, C, F = GND (High current configuration) Symbol Parameter...