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United Monolithic Semiconductors

CHA2069-QDG Datasheet Preview

CHA2069-QDG Datasheet

18-30GHz Low Noise Amplifier

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CHA2069-QDG
RoHS COMPLIANT
18-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA2069-QDG is a three-stage self-biased
wide band monolithic low noise amplifier.
Typical
applications
range
from
telecommunication (point to point, point to multi-
point, VSAT) to ISM and military markets.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via holes
through the substrate, air bridges and electron
beam gate lithography.
It is supplied in lead-free SMD package.
Main Features
Broadband performance 18-30GHz
3dB noise figure
20dB gain
65mA low DC power consumption
20dBm 3rd order intercept point (high current
configuration)
24L-QFN4x4 SMD package
MSL Level: 1
UMS
A2069
YYWW
Gain and NF @ high current configuration
(BCF grounded)
26
24
22
20
18 S21
16
14
12
10
8
6 NF
4
2
0
10 12 14 16 18 20 22 24 26 28 30 32
Frequency (GHz)
Main Characteristics
Tamb = +25°C, Vd = +4,5V Pads: B, C, F = GND (High current configuration)
Symbol
Parameter
Min Typ Max
NF Noise figure
3 4.5
G Gain
17 20
3rd order intercept point (Pout/tone=-5dBm)
IP3 18
18-26GHz
20
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Unit
dB
dB
dBm
Ref. : DSCHA2069QDG9322- 18 Nov 09
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09




United Monolithic Semiconductors

CHA2069-QDG Datasheet Preview

CHA2069-QDG Datasheet

18-30GHz Low Noise Amplifier

No Preview Available !

CHA2069-QDG
18-30GHz Low Noise Amplifier
Electrical Characteristics (low current configuration)
Tamb = +25°C, Vd = +4.5V, pads: B, D, E = GND
Symbol
Parameter
Fop Operating frequency range
G Gain
G Gain flatness
NF
IS11I
IS22I
IP3
P1dB
Id
Noise figure
Input return loss
Ouput return loss
3rd order intercept point (Pout/tone=-5dBm)
18-26GHz
Output power at 1dB gain compression
Drain bias current
Min
18
16.5
Typ
19.5
±2
3
-5
-7
16.5 18.5
9.0 10.5
65
Max
30
±2.5
Unit
GHz
dB
dB
4.5 dB
-2 dB
-2.5 dB
dBm
dBm
mA
These values are representative of onboard measurements as defined on the drawing in paragraph
“Evaluation mother board:". Performances can be optimized thanks to external matching (refer to the
"Sub-band enhancement" paragraph).
Electrical Characteristics (high current configuration)
Tamb = +25°C, Vd = +4,5V, pads: B, C, F = GND
Symbol
Parameter
Fop Operating frequency range
G Gain
G Gain flatness
NF
IS11I
IS22I
IP3
P1dB
Id
Noise figure
Input return loss
Ouput return loss
3rd order intercept point (Pout/tone=-5dBm)
18-26GHz
Output power at 1dB gain compression
Drain bias current
Min Typ Max Unit
18 30 GHz
17 20
dB
±2 ±2.5 dB
3 4.5 dB
-5 -2 dB
-7 -2.5 dB
18 20
dBm
12 13.5
85
dBm
mA
Ref. : DSCHA2069QDG9322- 18 Nov 09
2/16
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09


Part Number CHA2069-QDG
Description 18-30GHz Low Noise Amplifier
Maker United Monolithic Semiconductors
Total Page 16 Pages
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