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CHA2069-QDG - 18-30GHz Low Noise Amplifier

Description

The CHA2069-QDG is a three-stage selfbiased wide band monolithic low noise amplifier.

Typical applications range from telecommunication (point to point, point to multi-point, VSAT) to ISM and military markets.

Features

  • Broadband performance 18-31GHz.
  • 3dB noise figure.
  • 20dB gain.
  • 65mA low DC power consumption.
  • 20dBm 3rd order intercept point (high current configuration).
  • 24L-QFN4x4 SMD package.
  • MSL Level: 1 Gain & NF (dB) UMS A2069 YYWW Gain and NF @ high current configuration Gain and NF(B@CloFw cgurroreunnt cdoenfdig). (BDE grounded) 26 24 22 20 18 S21 16 14 12 10 8 6 NF 4 2 0 10 12 14 16 18 20 22 24 26 28 30 32 Frequency (GHz) Main Characteristics.

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Datasheet Details

Part number CHA2069-QDG
Manufacturer United Monolithic Semiconductors
File Size 437.74 KB
Description 18-30GHz Low Noise Amplifier
Datasheet download datasheet CHA2069-QDG Datasheet

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Full PDF Text Transcription

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CHA2069-QDG 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2069-QDG is a three-stage selfbiased wide band monolithic low noise amplifier. Typical applications range from telecommunication (point to point, point to multi-point, VSAT) to ISM and military markets. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in lead-free SMD package.
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