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CHA2098b99F - 20-40GHz High Gain Buffer Amplifier

Description

The CHA2098b99F is a high gain broadband three-stage monolithic buffer amplifier.

systems.

and DC grounds.

Features

  • Typical on wafer measurement.
  • Broadband performances: 20-40GHz.
  • 16dBm output power (1dB gain comp).
  • 19dB 1.5dB gain.
  • Low DC power consumption, 150mA @ 3.5V.
  • Chip size: 1.67 X 0.97 X 0.10mm Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Fop Operating frequency range 20 40 G Small signal gain 17 19 P1dB Output power at 1dB gain compression 13 16 Id Bias current 150 200 ESD Protection : Electrostatic discharge sensitive device. Observe han.

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Datasheet Details

Part number CHA2098b99F
Manufacturer United Monolithic Semiconductors
File Size 205.27 KB
Description 20-40GHz High Gain Buffer Amplifier
Datasheet download datasheet CHA2098b99F Datasheet

Full PDF Text Transcription

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CHA2098b99F 20-40GHz High Gain Buffer Amplifier GaAs Monolithic Microwave IC Description The CHA2098b99F is a high gain broadband three-stage monolithic buffer amplifier. It is Vd1 Vd2,3 designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF IN OUT and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Vg1 Vg2 Vg3 It is available in chip form. Main Features Typical on wafer measurement ■ Broadband performances: 20-40GHz ■ 16dBm output power (1dB gain comp) ■ 19dB 1.5dB gain ■ Low DC power consumption, 150mA @ 3.5V ■ Chip size: 1.67 X 0.97 X 0.
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