CHA3656-FAB datasheet, amplifier equivalent, United Monolithic Semiconductors

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CHA3656-FAB Features and benefits

* Broadband performances: 5.8-16GHz
* 14.5dBm power at 1dB gain compression
* 1.75dB Noise Figure
* 20dB Linear Gain
* DC bias: Vd1=Vd2=3.3V, Id=70mA .

CHA3656-FAB Application

such as C, X, Ku radar, test instrumentation and hi-rel applications. The circuit is manufactured with a pHEMT process,.

CHA3656-FAB Description

The CHA3656-FAB is a two-stage selfbiased wide band monolithic Low Noise Amplifier. It is dedicated to space communications and also well suited for a wide range of applications, such as C, X, Ku radar, test instrumentation and hi-rel applications. T.

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