CHA3666-FAB datasheet, amplifier equivalent, United Monolithic Semiconductors

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CHA3666-FAB Features and benefits

* Broadband performance 6-16GHz
* 1.8dB typical Noise Figure
* 24dBm 3rd order intercept point
* 16dBm power at 1dB compression
* 21dB gain
* Low .

CHA3666-FAB Application

and also well suited for a wide range of microwave and millimetre wave applications and systems. UMS A3666 YYWW ## SSS .

CHA3666-FAB Description

The CHA3666-FAB is a two-stage self-biased wide band monolithic Low Noise Amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is.

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