* Broadband performances: 6-17GHz
* 1.8dB noise figure
* 26dBm 3rd order intercept point
* 17dBm power at 1dB compression
* 21dB gain
* Low DC pow.

VD1 VD2 The CHA3666-99F is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and RFin electron beam gate .

CHA3666-FAA

CHA3666-FAB

CHA3666

CHA3660-QQG

CHA3664-QAG

CHA3665-QAG

CHA3667A

CHA3667aQDG

CHA3656-FAB

CHA3656-QAG

CHA3688aQDG

CHA3689-99F

CHA3694

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