Datasheet Details
| Part number | CHA7012 |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 604.20 KB |
| Description | X-band HBT High Power Amplifier |
| Datasheet |
 CHA7012 Datasheet
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General Description
The CHA7012 chip is a monolithic twostage GaAs high power amplifier designed www.DataSheet4U.com for X band applications.
This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridge.
Key Features
- Frequency band : 9.2 -10.4GHz Output power (P3dB ): 38.5dBm High linear gain: > 20dB High PAE: > 38% Two biasing modes: -VDigital control thanks to TTL interface -VAnalog control thanks to biasing circuit Chip size: 5.00 x 3.68 x 0.1mm Pout (dBm @ 3dBc Linear Gain (Pin=0dBm) 24 20 1 6 9 9.2 9.4 9.6 9.8 1 0 1 0.2 1 0.4 1 0.6 Main Characteristics Pout & PAE @3dBc and Linear Gain (Temperature 25°C) Frequency ( G H z) Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20% Symbol.