CHA7114-99F Datasheet | United Monolithic Semiconductors

X Band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7114-99F is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS 0.25µm power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: - The backside of the chip is both RF and DC grounded - Bond pads and back side are gold plated for patibility with eutectic die attach method and thermo-pression bonding process. Main Features - 0.25µm Power pHEMT Technology - 8.5- 11.5GHz Frequency Range - 8W Output Power @ 4dBcp - High PAE: > 40% @ 4dBcp - 20dB nominal Gain - Quiescent Bias...