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CHA7114 - X Band High Power Amplifier

Datasheet Summary

Description

CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications.

This device is manufactured using a UMS 0.25 µm power pHEMT process, including, via holes through the substrate and air bridges.

Features

  • 0.25µm Power pHEMT Technology 8.5.
  • 11.5GHz Frequency Range 8W Output Power @ 4dBc High PAE: > 40% @ 4dBc 20dB nominal Gain Quiescent Bias point: Vd = 8V, Id = 2A Chip size: 4.41mm x 3.31mm x 0.07mm Main Characteristics Tamb = +25° C (Tamb is the back-side of the chip) Vd = 8V, Id (Quiescent) = 2A, Pulse width = 25µs, Duty cycle = 10% Symbol Top Fop P_4dBc G Parameter Operating temperature range Operating frequency range Output power @ 4dBc @ 25° C Small signal gain @ 25° C Min -40 8.5.

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Datasheet Details

Part number CHA7114
Manufacturer United Monolithic Semiconductors
File Size 316.61 KB
Description X Band High Power Amplifier
Datasheet download datasheet CHA7114 Datasheet
Additional preview pages of the CHA7114 datasheet.

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Full PDF Text Transcription

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CHA7114 X Band High Power Amplifier GaAs Monolithic Microwave IC Vg2 Vd2 Description www.DataSheet4U.comThe Pout (dBm) & PAE (%) & Gain (dB) CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS 0.25 µm power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: • The backside of the chip is both RF and DC grounded • Bond pads and back side are gold plated for compatibility with eutectic die attach method and thermo-compression bonding process. Vg1 Vd1 IN OUT Vg1 Vd1 Vg2 Vd2 50 45 40 35 30 25 20 15 Pulse : 25µs 10% 10 8 8,5 9 9,5 10 10,5 11 11,5 12 Frequency (GHz) Linear Gain Pout @ 4dBc PAE @ 4dBc Main Features 0.25µm Power pHEMT Technology 8.
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