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CHA7115-99F - GaAs Monolithic Microwave

General Description

GaAs high power amplifier designed for X-band applications.

mismatch load.

Key Features

  •  0.25µm Power pHEMT Technology  Frequency band: 8.5.
  • 11.5GHz  Output power : 39dBm @ 4dBcomp  High linear gain: > 27dB  High PAE : 37% @ 4dBcomp  Quiescent bias point: Vd=8V, Id=2.2A  Chip size: 4.59 x 3.31 x 0.07mm Pout (dBm) & PAE (%) & Gain (dB) 44 42 40 Pout @ 4dBc 38 36 34 32 PAE @ 4dBc 30 28 26 24 Pulse : 25µs 10% 22 8 8.5 9 9.5 10 10.5 Frequency (GHz) Linear Gain 11 11.5 12 Main Characteristics Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10.

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Datasheet Details

Part number CHA7115-99F
Manufacturer United Monolithic Semiconductors
File Size 112.62 KB
Description GaAs Monolithic Microwave
Datasheet download datasheet CHA7115-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA7115-99F RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description Vg3 Vd3 The CHA7115 is a monolithic three-stage GaAs high power amplifier designed for X-band applications. Vg2 Vd2 Vg1 The HPA provides typically 8W output power associated to 36% power added efficiency at IN OUT 4dBcomp and a high robustness on mismatch load. Vd1 Vd2 This device is manufactured using 0.25µm Power pHEMT process, including, via holes through the substrate and air bridges. Vg3 Vd3 It is available in chip form. Main Features  0.25µm Power pHEMT Technology  Frequency band: 8.5 – 11.5GHz  Output power : 39dBm @ 4dBcomp  High linear gain: > 27dB  High PAE : 37% @ 4dBcomp  Quiescent bias point: Vd=8V, Id=2.2A  Chip size: 4.59 x 3.31 x 0.