CHA7060-QAB datasheet, amplifier equivalent, United Monolithic Semiconductors

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CHA7060-QAB Features and benefits

* RF bandwidth: 5.6-8.5GHz
* Gain: 30dB
* Psat: 41dBm (@5dB gain comp)
* EVM: -33dB@34dBm average Pout (1)
* PAE : 40% @41dBm average Pout
* Low A.

CHA7060-QAB Application

It is supplied in RoHS compliant SMD package. Main Features
* RF bandwidth: 5.6-8.5GHz
* Gain: 30dB
* Psat.

CHA7060-QAB Description

The CHA7060-QAB is a two stages monolithic GaN High Power Amplifier, reaching 12 Watt output power over 6-9GHz bandwidth. It offers high linearity performance with 30dB of Gain and an EVM of 33dB @34dBm average Pout (56MHz modulation bandwidth, 4QAM).

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