Datasheet Details
| Part number | CHA7114 |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 316.61 KB |
| Description | X Band High Power Amplifier |
| Datasheet |
 CHA7114 Datasheet
|
|
|
General Description
CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications.
This device is manufactured using a UMS 0.25 µm power pHEMT process, including, via holes through the substrate and air bridges.
Key Features
- 0.25µm Power pHEMT Technology 8.5.
- 11.5GHz Frequency Range 8W Output Power @ 4dBc High PAE: > 40% @ 4dBc 20dB nominal Gain Quiescent Bias point: Vd = 8V, Id = 2A Chip size: 4.41mm x 3.31mm x 0.07mm Main Characteristics Tamb = +25° C (Tamb is the back-side of the chip) Vd = 8V, Id (Quiescent) = 2A, Pulse width = 25µs, Duty cycle = 10% Symbol Top Fop P_4dBc G Parameter Operating temperature range Operating frequency range Output power @ 4dBc @ 25° C Small signal gain @ 25° C Min -40 8.5.