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CHA7114-99F - X Band High Power Amplifier

General Description

The CHA7114-99F is a monolithic two-stage GaAs high power amplifier designed for X band applications.

This device is manufactured using a UMS 0.25µm power pHEMT process, including, via holes through the substrate and air bridges.

The backside of the chip is bo

Key Features

  • 0.25µm Power pHEMT Technology.
  • 8.5.
  • 11.5GHz Frequency Range.
  • 8W Output Power @ 4dBcp.
  • High PAE: > 40% @ 4dBcp.
  • 20dB nominal Gain.
  • Quiescent Bias point: Vd = 8V, Id = 2A.
  • Chip size: 4.41 x 3.31 x 0.07mm Pout (dBm) & PAE (%) & Gain (dB) IN 50 45 40 35 30 25 20 15 10 8 Vg2 Vd2 Vg1 Vd1 Vg1 Vd1 Vg2 Vd2 OUT PAE @ 4dBc Pout @ 4dBc Linear Gain Pulse : 25µs 10% 8,5 9 9,5 10 10,5 11 11,5 12 Frequency (GHz) Main Characteristics Tamb = +25°C (Tamb is the bac.

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Datasheet Details

Part number CHA7114-99F
Manufacturer United Monolithic Semiconductors
File Size 418.08 KB
Description X Band High Power Amplifier
Datasheet download datasheet CHA7114-99F Datasheet

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CHA7114 X Band High Power Amplifier
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA7114-99F X Band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7114-99F is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS 0.25µm power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process:  The backside of the chip is both RF and DC grounded  Bond pads and back side are gold plated for compatibility with eutectic die attach method and thermo-compression bonding process. Main Features  0.25µm Power pHEMT Technology  8.5–11.5GHz Frequency Range  8W Output Power @ 4dBcp  High PAE: > 40% @ 4dBcp  20dB nominal Gain  Quiescent Bias point: Vd = 8V, Id = 2A  Chip size: 4.41 x 3.31 x 0.