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CHA7060-QAB

Power Amplifier

CHA7060-QAB Features

* RF bandwidth: 5.6-8.5GHz

* Gain: 30dB

* Psat: 41dBm (@5dB gain comp)

* EVM: -33dB@34dBm average Pout (1)

* PAE : 40% @41dBm average Pout

* Low AM/AM & AM/PM

* DC bias: Vd = 20.0Volt @ Idq = 420mA

* 38 leads QFN 6x6mm // MSL3 (1) 56MHz modulation bandwidth, 4QAM Out

CHA7060-QAB General Description

The CHA7060-QAB is a two stages monolithic GaN High Power Amplifier, reaching 12 Watt output power over 6-9GHz bandwidth. It offers high linearity performance with 30dB of Gain and an EVM of 33dB @34dBm average Pout (56MHz modulation bandwidth, 4QAM). The circuit is based on GaN technology; 150nm Ga.

CHA7060-QAB Datasheet (1.06 MB)

Preview of CHA7060-QAB PDF

Datasheet Details

Part number:

CHA7060-QAB

Manufacturer:

United Monolithic Semiconductors

File Size:

1.06 MB

Description:

Power amplifier.

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TAGS

CHA7060-QAB Power Amplifier United Monolithic Semiconductors

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